Remote sensing system for hydrogen using GaN Schottky diodes

@article{Kouche2005RemoteSS,
  title={Remote sensing system for hydrogen using GaN Schottky diodes},
  author={Ahmad El Kouche and Jenshan Lin and Mark E. Law and Sanghyeon Kim and B. S. Kim and Fan Ren and Stephen J. Pearton},
  journal={Sensors and Actuators B-chemical},
  year={2005},
  volume={105},
  pages={329-333}
}
Abstract The characteristics and operation of a GaN Schottky diode-based remote sensing system for hydrogen is described. The detection mechanism is a change in effective barrier height of the Pt or Pd contact on the GaN in the presence of even 600 ppm of H 2 This translates to a change in forward current at fixed bias voltage or a change in voltage across diode at fixed bias current, which means a change in impedance. The change in sensor impedance is amplified and the signal is transmitted at… Expand

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