Remote p-doping of InAs nanowires.

@article{Li2007RemotePO,
  title={Remote p-doping of InAs nanowires.},
  author={H-Y Li and O. Wunnicke and Magnus T Borgstr{\"o}m and W G G Immink and Maarten H M van Weert and Marcel A. Verheijen and Erik P A M Bakkers},
  journal={Nano letters},
  year={2007},
  volume={7 5},
  pages={1144-8}
}
We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor-liquid-solid (VLS) mechanism. Remote doping of III-V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that… CONTINUE READING

From This Paper

Topics from this paper.

Similar Papers

Loading similar papers…