Remembering Zhores Alferov
@article{Ivanov2019RememberingZA, title={Remembering Zhores Alferov}, author={Sergey Ivanov}, journal={Nature Photonics}, year={2019} }
Father of the semiconductor laser, Nobel Prize laureate and director of the Ioffe Institute in St Petersburg, Zhores Alferov was a much-loved scientist and educator whose research changed the modern world.
References
SHOWING 1-10 OF 13 REFERENCES
Low threshold, large To injection laser emission from (InGa)As quantum dots
- Physics
- 1994
Low threshold, large T/sub o/ injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a…
Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well
- Physics
- 2005
We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune…
Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
- Physics
- 1982
Extremely low threshold GRIN‐SCH lasers with single and double active layers were prepared by molecular beam epitaxy as a result of an increased optical confinement, a significant reduction in the…
EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
- Materials Science, Physics
- 1967
Efficient visible light emitting diodes have been fabricated from Ga1‐xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have…
Single-crystal gallium arsenide on insulating substrates
- Physics, Materials Science
- 1968
Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several…
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
- Physics, Materials Science
- 1970
Double‐heterostructure GaAs–Alx Ga1−x As injection lasers which operate continuously at heat‐sink temperatures as high as 311°K have been fabricated by liquid‐phase epitaxy. Thresh‐olds for square…
Film Deposition by Molecular-Beam Techniques
- Physics, Materials Science
- 1971
A review of molecular-beam epitaxy of GaAs and the observation of surface structures with high-energy electron diffraction in an ultrahigh-vacuum system is described. The utilization of these surface…
A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
- Materials Science
- 2003
A mid-IR laser based on a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure with a III–V/II–VI heterovalent interface at the 0.6-μm-InAs active region has been fabricated by molecular-beam…
Growth of Periodic Structures by the Molecular‐Beam Method
- Materials Science, Physics
- 1971
Molecular‐beam epitaxy has been used successfully for the attainment of single‐crystal multiple‐layer structures with alternating types of conductivities (p/n) or band‐gap energies (GaAs/AlxGa1−xAs).…
CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
- Physics
- 1999
This letter reports on the self-organized growth of nanoscale dot-like CdSe-based islands during molecular beam epitaxy of CdSe/ZnSe nanostructures with a CdSe thickness between 0.75 and 3.0…