Reliable extraction of series resistance in silicon nanowire FETs using Y-function technique

@article{Kim2011ReliableEO,
  title={Reliable extraction of series resistance in silicon nanowire FETs using Y-function technique},
  author={Ye-Ram Kim and Sang-Hyun Lee and Chang-Ki Baek and Rock-Hyun Baek and Kyoung-Hwan Yeo and Dong-Won Kim and Jeong-Soo Lee and Yoon-Ha Jeong},
  journal={2011 IEEE Nanotechnology Materials and Devices Conference},
  year={2011},
  pages={262-265}
}
Series resistance (R<inf>sd</inf>) and mobility attenuation factors (θ<inf>1</inf>, and (θ<inf>2</inf>) of silicon nanowire FET (NWFET) are simultaneously extracted using Tanaka method (YФ method) and Y-function technique. Consecutively, simulated drain current (I<inf>d</inf>) and transconductance (g<inf>m</inf>) is precisely fitted to the measured data with the extracted (θ<inf>1</inf>, (θ<inf>2</inf>, and R<inf>sd</inf>. Significantly reduced mobility degradation due to volume inversion… CONTINUE READING

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Showing 1-5 of 5 references

Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y - Function Technique

  • C. K. Baek, S. W. Jung, +4 authors Y. H. Jeong
  • IEEE Trans . Nanotechnology

Comparison of Series Resistance and Mobility Degradation Extracted from nand p - Type Si - Nanowire Field Effect Transistors Using the Y - function Technique

  • M. Saitoh Tsutsui, T. Saraya, +14 authors D. Park
  • Japanese Journal of Applied Physics

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