Reliability study of phase-change nonvolatile memories

@article{Pirovano2004ReliabilitySO,
  title={Reliability study of phase-change nonvolatile memories},
  author={A. Pirovano and A. Redaelli and F. Pellizzer and F. Ottogalli and M. Tosi and D. Ielmini and A. Lacaita and R. Bez},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2004},
  volume={4},
  pages={422-427}
}
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110/spl deg/C and that a resistance difference of two order of magnitude between the cell states can be maintained for… Expand
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