Reliability study of phase-change nonvolatile memories

  title={Reliability study of phase-change nonvolatile memories},
  author={A. Pirovano and A. Redaelli and Fabio Pellizzer and F. Ottogalli and Marina Tosi and Daniele Ielmini and Andrea Leonardo Lacaita and Roberto Bez},
  journal={IEEE Transactions on Device and Materials Reliability},
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110/spl deg/C and that a resistance difference of two order of magnitude between the cell states can be maintained for… Expand
Reliability Characterization ofPhase Change Memory
Phase Change Memory (PCM) has emerged as an attr~ctive candidate for next-generation non-volatile memory devices, For these applications, reliability is determined by the abili~y to retain the stateExpand
Reliability characterization of Phase Change Memory
Phase Change Memory (PCM) has emerged as an attractive candidate for next-generation non-volatile memory devices. For these applications, reliability is determined by the ability to retain the stateExpand
High performance of multilevel-cell phase change memory device with good endurance reliability
A staircase-up program is exploited and verified method in the current-driven 4 Mb PCM chip to achieve MLC storage to achieve good performance and the direct results of the change in the R–I characteristic and resistance distribution during the cycles are displayed. Expand
Reset-induced variability of retention characteristics in phase change memory (PCM)
Data retention in phase change memory (PCM) is limited by the metastable nature of the amorphous phase, which transforms into the stable crystalline phase at elevated temperatures. A deeperExpand
Switching and programming dynamics in phase-change memory cells
Emerging phase-change memory (PCM) technology for non-volatile applications presents many potential advantages in terms of scalability, endurance and program/read speed. While several integrationExpand
Status and challenges of phase change memory modeling
Transport and phase-change modeling in PCM cell is reviewed and used to discuss the programming-current reduction through geometry optimization, the trade-off between programming current and readout resistance and the program disturb phenomenon. Expand
Status and challenges of PCM modeling
  • A. Lacaita, D. Ielmini
  • Computer Science
  • ESSDERC 2007 - 37th European Solid State Device Research Conference
  • 2007
The most significant achievements in the electrothermal modelling of PCM single cell are addressed, and the application modeling of the cell is focused on, discussing programming current minimization by geometry optimization, trade-off between programming current and readout resistance and the program disturb issue. Expand
A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling
Using a phase-change memory (PCM) device composed of Ge2Sb2e5 (GST), we studied the mechanism of the SET-stuck failure (SSF), a constantly low-resistance state during write/erase (W/E) cycling. TheExpand
PCM Main Reliability Features
To enable commercialization of phase change memory (PCM), the component must be able to operate reliably over the application lifetime. This requires the ability to retain data from 5 to 10 years andExpand
Highly automated sequence for Phase Change Memory test structure characterization
The Phase Change Memory (PCM), is one of the most promising concepts, as a replacement of Flash memories that should be put in production in next years. However, even if the robustness of suchExpand


Scaling analysis of phase-change memory technology
The scaling capability of chalcogenide-based phase-change memory (PCM) is discussed. Experimental and numerical results are presented, showing that the reset current scales down with the deviceExpand
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
  • S. Lai, T. Lowrey
  • Computer Science
  • International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
  • 2001
The development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node is discussed. Expand
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
  • M. Gill, T. Lowrey, J. Park
  • Computer Science
  • 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
  • 2002
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3Expand
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new /spl mu/trench approach is fully compatible with an advanced CMOS technology, is highlyExpand
Current status of the phase change memory and its future
  • S. Lai
  • Computer Science
  • IEEE International Electron Devices Meeting 2003
  • 2003
The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified. Expand
Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies
  • Y. Hwang, J.S. Hong, +20 authors Kinam Kim
  • Computer Science
  • 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
  • 2003
It is observed that a nonvolatile random access memory is fully integrated by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor on the basis of basic characteristics of the memory operation and reliable performances on hot temperature operation. Expand
An 8Mb demonstrator for high-density 1.8V Phase-Change Memories
An 8Mb Non-Volatile Memory Demonstrator incorporating a novel 0.32 /spl mu/m/sup 2/ Phase-Change Memory (PCM) cell using a Bipolar Junction Transistor (BJT) as selector and integrated into a 3V 0.18Expand
Writing current reduction for high-density phase-change RAM
By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigatedExpand
The mechanism of threshold switching in amorphous alloys
This paper surveys the characteristics of threshold switching systems and examines the evidence for threshold switching as an electronic process. A semiquantitative model is proposed for the natureExpand
Reliability of ovonic unified memory
  • 5th Top. Res. Conf. Reliability, 2002.
  • 2002