Reliability performance of ETOX based flash memories

  title={Reliability performance of ETOX based flash memories},
  author={G. Verma and Neal R. Mielke},
  journal={26th Annual Proceedings Reliability Physics Symposium 1988},
  • G. VermaN. Mielke
  • Published 12 April 1988
  • Engineering
  • 26th Annual Proceedings Reliability Physics Symposium 1988
The reliability performance of a 64 K flash memory based on a single-transistor, floating-gate memory cell is considered. The reliability performance of these memories, before program/erase cycling, matches that of UV EPROMs. Cycling generally does not introduce defect-related failures common to some EEPROMs. However, it may aggravate two intrinsic instabilities found in the UV EPROM (intrinsic charge loss and the DC program disturb mechanism). Experience shows that these are related effects… 

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