Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling

@article{Cheng2009ReliabilityOS,
  title={Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling},
  author={Peng Cheng and C. Grens and J. D. Cressler},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2009},
  volume={9},
  pages={440-448}
}
This paper presents the underlying physics and modeling of aggressively biased cascode SiGe heterojunction bipolar transistor power amplifier (PA) cores under large-signal operating conditions. The damage characteristics observed during RF operation, particularly the base leakage and collector-base (CB) junction failure, are investigated in detail using dc stress methods. Base leakage was characterized across geometry, voltage, and current conditions, and a damage model is purposed based on… CONTINUE READING
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