Reliability improvement study of a build-up wire bonding EBGA package using eight-layer 0.13 /spl mu/m copper silicon technology

@article{Yang2006ReliabilityIS,
  title={Reliability improvement study of a build-up wire bonding EBGA package using eight-layer 0.13 /spl mu/m copper silicon technology},
  author={Liyu Yang and Calvin King and Ru Fang Peng and Eric Gelvin},
  journal={56th Electronic Components and Technology Conference 2006},
  year={2006},
  pages={6 pp.-}
}
In this paper, the authors discuss the die cracking/thin film delamination failures seen in 8-layer 0.13 mum silicon during the development of an EBGA package with 45 mm times 45 mm body size. The die size was 15.2 mm per side with over 1400 wire bonded pads. The large package body size and die size provided both manufacturing and reliability challenges. It was pointed out that, due to the large die size and complex 8-layer metal silicon process used, the reliability performance heavily relies… CONTINUE READING