Reliability effects on MOS transistors due to hot-carrier injection

@article{Chen1985ReliabilityEO,
  title={Reliability effects on MOS transistors due to hot-carrier injection},
  author={Kueing-Long Chen and S. Saller and I S Groves and D L Scott},
  journal={IEEE Transactions on Electron Devices},
  year={1985},
  volume={32},
  pages={386-393}
}
The high drain-effect transistor characteristic observed after hot-carrier injection and trapping in the oxide has been found to be due to the uneven trapped-carrier distribution near the drain, which causes the threshold voltage to vary as a function of drain voltage. A discussion of the role and effects of both electron and hole injection is presented. The nonlinear distribution of carriers trapped in the gate oxide is described. One result is that the nonuniform surface band bending causes… CONTINUE READING
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