Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS

@article{Moens2008ReliabilityAO,
  title={Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS},
  author={Peter Moens and Geert Van den bosch},
  journal={Microelectronics Reliability},
  year={2008},
  volume={48},
  pages={1300-1305}
}
The total safe operating area of both lateral and vertical integrated DMOS power transistors is evaluated. The electrical, hot carrier and thermal safe operating area of both devices types is investigated, and a comparison is made. It is found that the vertical DMOS exhibits a superior hot carrier and electrical safe operating area, mainly being due to the absence of a field oxide dot in the device drift region. The thermal safe operating area of LDMOS and VDMOS is identical. 

Topics from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 11 CITATIONS

Correlation of 1/ƒ noise and high-voltage-stress-induced degradation in LDMOS

  • 2012 IEEE International Reliability Physics Symposium (IRPS)
  • 2012
VIEW 4 EXCERPTS
CITES BACKGROUND
HIGHLY INFLUENCED

Tunable Holding-Voltage High Voltage ESD Devices

  • 2019 IEEE International Reliability Physics Symposium (IRPS)
  • 2019
VIEW 1 EXCERPT
CITES METHODS

A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor

  • IEEE Transactions on Device and Materials Reliability
  • 2018
VIEW 1 EXCERPT
CITES BACKGROUND

Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability

  • 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
  • 2010
VIEW 1 EXCERPT
CITES BACKGROUND

Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress

  • 2009 IEEE International Integrated Reliability Workshop Final Report
  • 2009
VIEW 1 EXCERPT
CITES BACKGROUND

High current repetitive avalanche of low voltage trench power MOSFETs

  • 2009 21st International Symposium on Power Semiconductor Devices & IC's
  • 2009
VIEW 2 EXCERPTS
CITES BACKGROUND