Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

@article{Yu2010ReliabilityIO,
  title={Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments},
  author={Liangchun C Yu and Greg T. Dunne and Kevin S. Matocha and Kin P. Cheung and John S. Suehle and Kuang Sheng},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2010},
  volume={10},
  pages={418-426}
}
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The metal-oxide-semiconductor (MOS)-controlled power devices are the most favorable structure; however, it is widely believed that silicon oxide on SiC is physically limited, particularly at high temperatures. Therefore, experimental measurements of long-term reliability of oxide at high temperatures are necessary. In this paper, time-dependent dielectric… CONTINUE READING
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