Reliability Characteristics of Ferroelectric <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Si:HfO}_{2}$</tex></formula> Thin Films for Memory Applications


Reliability characteristics of ferroelectric thin films (10 nm) based on Si-doped HfO<sub>2</sub> have been investigated with focus on potential memory applications. Extensive retention, imprint, and endurance data for this new type of ferroelectric material are presented for the first time. The variability of reliability characteristics in terms of… (More)


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