Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

Abstract

Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.

DOI: 10.1186/1556-276X-6-189

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Cite this paper

@inproceedings{Frigeri2011RelationshipBS, title={Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers}, author={C. Frigeri and M. Ser{\'e}nyi and Nguyen Quoc Kh{\'a}nh and Attila Csik and Ferenc Riesz and Zolt{\'a}n Erd{\'e}lyi and L. Nasi and Dezső L{\'a}szl{\'o} Beke and Hans-Gerd Boyen}, booktitle={Nanoscale research letters}, year={2011} }