Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution

@article{Makino2011ReexaminationOS,
  title={Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution},
  author={Hiroshi Makino and Shunji Nakata and Hirotsugu Suzuki and Shin'ichiro Mutoh and Masayuki Miyama and Tsutomu Yoshimura and Shuhei Iwade and Yoshio Matsuda},
  journal={IEEE Transactions on Circuits and Systems II: Express Briefs},
  year={2011},
  volume={58},
  pages={230-234}
}
Four definitions of static random access memory (SRAM) cell write margins (WMs) were reexamined by analyzing the dependence of the WM on the SRAM cell transistor threshold voltages (Vth's) in order to find a preferable definition. The WM is expected to obey the normal distribution if the differential coefficients of the WM to Vth's are constant over a wide range of Vth variations. This means that the write yield can be easily predicted by a small number of measured samples. Using SPICE in 45-nm… CONTINUE READING
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