Reduction of threshold voltage sensitivity in SOI MOSFET's

  title={Reduction of threshold voltage sensitivity in SOI MOSFET's},
  author={M. J. Sherony and L. Su and J. Chung and D. Antoniadis},
  journal={IEEE Electron Device Letters},
The threshold voltage sensitivity, of fully depleted SOI MOSFET's to variations in SOI silicon film thickness was examined through both simulation and device experiments. The concept of designing the channel V/sub th/ implant to achieve a constant dose within the film, rather than a constant doping concentration, was studied for a given range of film thicknesses. Minimizing the variation in retained dose reduced the threshold voltage sensitivity to film thickness for the range of t/sub si… CONTINUE READING