Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes.

@article{Stroud2002ReductionOS,
  title={Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes.},
  author={R. M. Stroud and Aubrey T Hanbicki and Young D. Park and George Kioseoglou and Andre Petukhov and Berend T Jonker and Grigorios Itskos and Athos Petrou},
  journal={Physical review letters},
  year={2002},
  volume={89 16},
  pages={166602}
}
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin-injection efficiency across heteroepitaxial interfaces. An inverse correlation be-tween spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes that exhibit quantum well spin polarizations up to 85%. A theoretical treatment shows that the suppression of spin injection due to interface defects… CONTINUE READING

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