Reduction of native oxides on GaAs during atomic layer growth of Al 2 O 3

@inproceedings{Lee2009ReductionON,
  title={Reduction of native oxides on GaAs during atomic layer growth of Al 2 O 3},
  author={Hang Dong Lee and Tian Feng and Lei Yu and Daniel D. T. Mastrogiovanni and A. E. Wan and Torgny Gustafsson and Eric L. Garfunkel},
  year={2009}
}
The reduction of surface “native” oxides from GaAs substrates following reactions with trimethylaluminum TMA precursor is studied using medium energy ion scattering spectroscopy MEIS and x-ray photoelectron spectroscopy XPS . MEIS measurements after one single TMA pulse show that 65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers. © 2009 American… CONTINUE READING

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