Reduction of Spikes on the Sides of Patterned Thin Films for Magnetic Tunnel Junction Based Molecular Device Fabrication

@inproceedings{Tyagi2019ReductionOS,
  title={Reduction of Spikes on the Sides of Patterned Thin Films for Magnetic Tunnel Junction Based Molecular Device Fabrication},
  author={Pawan Tyagi and Edward Friebe and Beachrhell Jacques and Tobias Goulet and Stanley Travers},
  year={2019}
}
Sputter thin film deposition after photolithography often produces unwanted spikes along the side edges. These spikes are a significant issue for the development of magnetic tunnel junction (MTJ)-based memory and molecular spintronics devices, microelectronics, and microelectromechanical systems because they influence the properties of the other films deposited on the top. Our molecular spintronics devices that utilizes MTJ as the testbed are almost short-lived and encountered high background… 

Figures and Tables from this paper

References

SHOWING 1-10 OF 13 REFERENCES

Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically

Molecular electrodes at the exposed edge of metal/insulator/metal trilayer structures.

With a Ni/Al2O3/Au molecular electrode, the tether binding was found to be reversible to the top Au layer, allowing for a new class of chemical detection based on the steric bulk of coordinating analytes to disconnect the molecular current path.

Dielectric-assisted trilayer lift-off process for improved metal definition

We have developed a simple, trilayer lift-off process for obtaining metal of various thickness while retaining good feature definition down to 1 μm, using only standard photoresist and developer, and

A simple and effective lift-off with positive photoresist

This paper describes a simple and effective lift-off method which relies upon a single layer of positive photoresist and the insertion of a diffuser in the conventional lithography. The inserted

Single-Step Optical Lift-Off Process

It appears that removal of solvent and low-molecular-weight resin from the ®AZ resist may be responsible for the observed differential development rates and the soak time and temperature behavior indicate a diffusion-type process.

Selective lateral ZnO nanowire growth by surface diffusion on nanometer scale-patterned alumina on silicon

Lateral ZnO nanowires (NWs) were selectively grown from the edge of a SiO 2 /Si–Al 2 O 3 –SiO 2 /Si multilayer structure for potential integration into devices using Si processing technology.

Wall profile of thick photoresist generated via contact printing

High-aspect-ratio patterns generated by direct contact or proximity printing in LIGA and other similar processes have recently gained great interest in the field of MEMS. One key issue for a

Experimental Study of Numerical Optimization for 3-D Microstructuring Using DMD-Based Grayscale Lithography

Digital micromirror device (DMD)-based grayscale lithography is a promising tool for 3-D photolithography of thick photoresists, because this technique provides a patterning solution for free-form