Reducing forward voltage and enhancing output performance of InGaN‐based blue light‐emitting diodes using metal dot‐embedded transparent p‐type finger

@inproceedings{Lee2017ReducingFV,
  title={Reducing forward voltage and enhancing output performance of InGaN‐based blue light‐emitting diodes using metal dot‐embedded transparent p‐type finger},
  author={Jeeyun Lee and Dae Hyun Kim and Ki Seok Kim and Tae Yeon Seong},
  year={2017}
}
We investigated the effect of transparent ITO/Ag/ITO multilayer p-type finger on the light output performance of blue GaN-based light emitting diodes (LEDs). The electrical and optical properties of IAI multilayers were characterised as a function of ITO layer thickness. The IAI (30 nm/18 nm/30 nm) multilayers had a transmittance of 94.6% at 450 nm, a sheet resistance of 4.49 Ω/sq and a Haacke's FOM of 128.15 × 10−3 Ω−1. LEDs fabricated with reference (Cr/Ni/Au) contact had a forward-bias… CONTINUE READING