Reducing contact resistance in graphene devices through contact area patterning.

  title={Reducing contact resistance in graphene devices through contact area patterning.},
  author={Joshua Thomas Smith and Aaron D. Franklin and Damon B. Farmer and Christos D. Dimitrakopoulos},
  journal={ACS nano},
  volume={7 4},
Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the… CONTINUE READING
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