Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride

Abstract

The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0 10 6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3… (More)

Topics

6 Figures and Tables

Cite this paper

@inproceedings{Woo2008RedSI, title={Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride}, author={Robyn L Woo and Gordon Malouf and S. F. Cheng and Richard Woo and M. S. Goorsky and Robert F. Hicks}, year={2008} }