Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients.

Abstract

Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.

DOI: 10.1021/acs.nanolett.5b00089

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Cite this paper

@article{Huh2015RectifyingSG, title={Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients.}, author={Junghwan Huh and Hoyeol Yun and Dong-Chul Kim and A Mazid Munshi and Dasa L. Dheeraj and Hanne Kauko and Antonius T J van Helvoort and Sangwook Lee and B. O. Fimland and Helge Weman}, journal={Nano letters}, year={2015}, volume={15 6}, pages={3709-15} }