Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

Abstract

We study memory devices consisting of singlewalled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 10 operating cycles, with a current drive capability up to 10 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.

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@inproceedings{Bartolomeo2010RecordEF, title={Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell}, author={Antonio Di Bartolomeo and Yafang Yang and M Rinzan and A Boyd and P . de Barbara}, year={2010} }