Recombination in Tritiated Amorphous Silicon

@inproceedings{Kosteski2000RecombinationIT,
  title={Recombination in Tritiated Amorphous Silicon},
  author={Tome Kosteski and Franco Gaspari and David H F Hum and Stefan Costea and Stefan Zukotynski and Nazir P. Kherani and Walter T Shmayda},
  year={2000}
}
Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illuminated conditions. There was a decrease in the forward characteristic of the diode when measured under dark conditions and there was a decrease in photovoltaic power. These changes can be explained by the creation of dangling bonds when bonded tritium atoms decay. By annealing the diode at… CONTINUE READING

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