Recessed polysilicon encapsulated local oxidation

@article{Cooper1991RecessedPE,
  title={Recessed polysilicon encapsulated local oxidation},
  author={K. J. Cooper and S. Roth and W. Ray and H. C. Kirsch and J. Ko},
  journal={IEEE Electron Device Letters},
  year={1991},
  volume={12},
  pages={515-517}
}
  • K.J. Cooper, S. Roth, +2 authors J. Ko
  • Published 1991
  • Materials Science
  • IEEE Electron Device Letters
  • Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits scalability. Recessed polysilicon encapsulated local oxidation (recessed PELOX) is demonstrated to achieve both low encroachment and increased field oxide recess. These benefits are obtained without sacrificing process simplicity or defectivity as evidenced by excellent gate oxide and diode quality… CONTINUE READING
    2 Citations

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