Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

@article{Kashiwagi2013RecessedGateEG,
  title={Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation},
  author={Junichi Kashiwagi and Tetsuya Fujiwara and Minoru Akutsu and Norikazu Ito and Kentaro Chikamatsu and Ken ich Nakahara},
  journal={IEEE Electron Device Letters},
  year={2013},
  volume={34},
  pages={1109-1111}
}
Recessed-gate GaN metal-oxide-semiconductor field-effect transistors with a double-insulator gate configuration demonstrate 10-MHz switching operation of which delay time is <;35 ns. The recess structure is fabricated by etching the Al0.19Ga0.81N layers to expose their underlying AlN layers. The devices include a thermally oxidized AlN layer onto which an… CONTINUE READING