Recent progress in scaling InP HEMT TMIC technology to 850 GHz

@article{Deal2014RecentPI,
  title={Recent progress in scaling InP HEMT TMIC technology to 850 GHz},
  author={W. R. Deal and Kevin M. K. H. Leong and Alexis Gar{\'c}ıa Zamora and Vesna Radisic and X. B. Mei},
  journal={2014 IEEE MTT-S International Microwave Symposium (IMS2014)},
  year={2014},
  pages={1-3}
}
In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design. 

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Power Amplification at 0.65 THz Using InP HEMTs

IEEE Transactions on Microwave Theory and Techniques • 2012

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