Recent advances in insulated gate bipolar transistor technology

@inproceedings{Yilmaz1990RecentAI,
  title={Recent advances in insulated gate bipolar transistor technology},
  author={Hamza Yilmaz and King Owyang and Mike F. Chang and John Lawrence Benjamin and W. R. Van Dell},
  year={1990}
}
Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area of the IGBTs. The turn-off time of the n-IGBT has been shortened to be as low as 40 ns. The p-channel IGBT latchup current has been improved… CONTINUE READING