Recent Progress in Thallium Bromide Gamma-Ray Spectrometer Development

Abstract

In recent years, progress in processing and crystal growth methods have led to a significant increase in the mobility-lifetime product of electrons in thallium bromide (TlBr). This has enabled single carrier collection devices with thickness greater than 1-cm to be fabricated. In this paper we report on our latest results from pixellated devices with depth… (More)

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Cite this paper

@article{Kim2012RecentPI, title={Recent Progress in Thallium Bromide Gamma-Ray Spectrometer Development}, author={Hadong Kim and Alireza Kargar and L. J. Cirignano and A. Churilov and Guido Ciampi and W. Higgins and F. Olschner and Kanai S. Shah}, journal={IEEE Transactions on Nuclear Science}, year={2012}, volume={59}, pages={243-248} }