Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor

@article{Kamath2012RealizingAA,
  title={Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor},
  author={Avinash Kamath and Zhixian Chen and Nansheng Shen and Navab Singh and G. Q. Lo and Dim-Lee Kwong and Dominik Kasprowicz and A. Pfitzner and Wojciech Maly},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={152-154}
}
This letter experimentally demonstrates and and or functionalities with a single MOS transistor. Device architecture and fabrication follow the recent work on fabrication-based feasibility assessment of junctionless vertical-slit field-effect transistor. Slit width variation is used to realize a particular functionality-wider for or function and narrower for and function. The fabricated n-type devices with the and and or functionalities exhibit good electrical performance: low off current (<; 5… CONTINUE READING
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