Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.

Abstract

We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger-Poisson solver, it is confirmed that confined states are present… (More)
DOI: 10.1088/0957-4484/24/3/035203

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