Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

@article{Nah2009RealizationOD,
  title={Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain},
  author={Junghyo Nah and En-Shao Liu and Davood Shahrjerdi and Kamran M. Varahramyan and Sanjay K. Banerjee and Emanuel Tutuc},
  journal={Applied Physics Letters},
  year={2009},
  volume={94},
  pages={063117}
}
We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1−x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm−2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher… 
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