Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET)

@article{Ojha1993RealizationOA,
  title={Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET)},
  author={J. J. Ojha and J V Simmons and R. S. Mand and A. Springthorpe},
  journal={IEEE Electron Device Letters},
  year={1993},
  volume={14},
  pages={385-387}
}
The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel structure. It contains a positive feedback loop between the gate and source terminals, which is activated above a gate voltage of 1.7 V. This leads to abrupt transitions between high… CONTINUE READING