Realization of GaN-based technology for high power and high frequency applications

Abstract

Summary form only given. Wide band gap semiconductor of GaN and its related materials are promising for future power and high frequency applications. In particular, the GaN high electron mobility transistor (HEMT) grown on large-size Si substrate is suitable for low-lost and high power switching applications. The GaN HEMT could be fabricated into convertors… (More)

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