Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI

@article{Haggag2007RealisticPO,
  title={Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI},
  author={Atef Haggag and Marcin Lemański and Gal Anderson and P. Abramowitz and Mohamed Moosa},
  journal={2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual},
  year={2007},
  pages={93-96}
}
Product Fmax shift is shown to be mainly due to HCI and NBTI. This is because the likelihood of a TDDB event in the product speed path is negligible. An exponential drain current and voltage dependence of HCI and a power-law gate voltage dependence of NBTI are shown to fit the Fmax shift quite well for realistic guardbands. 

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