Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

  title={Real-time device-scale imaging of conducting filament dynamics in resistive switching materials},
  author={Keundong Lee and Youngbin Tchoe and Hosang Yoon and Hyeonjun Baek and Kunook Chung and Sangik Lee and Chansoo Yoon and Bae Ho Park and Gyu‐Chul Yi},
  journal={Scientific Reports},
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range… 
9 Citations

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Nonvolatile memory devices based on resistive switching with fast switching speed and high density have driven extensive research that is potentially ideal for data‐centric applications such as

Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device

The designed experiment here provides the most direct and isolated evidence that the rough interface between electrode and ReRAM matrix is detrimental for the reproducibility of resistivity switching phenomena.

In situ observation of conducting filament in NiO memristive devices by electroluminescence

By synchronously measuring the electroluminescence (EL) of Pt/NiO/Pt unipolar resistive switching (RS) devices during switching, we have nondestructively observed the dynamic evolution of conducting

Recent Advances of Quantum Conductance in Memristors

Memristors with the filamentary switching mechanism have been acknowledged as a leading candidate for next‐generation nonvolatile memory applications, primarily due to their excellent downscaling

Light‐Responsive Ion‐Redistribution‐Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports

Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

Flexible resistive random access memory arrays fabricated by using NiO x /GaN microdisk arrays on graphene films operated reliably at temperatures as high as 180 °C and under bending conditions.



In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.

In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO2-x base layer, which consist of nanoscale TaO1-x filaments.

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.

Random and localized resistive switching observation in Pt/NiO/Pt

Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano‐sized (10 nm to 30 nm in diameter) conducting

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the application of electric fields is

Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices

The microstructure of TiO2 functional layers in nanoscale resistive switching devices was analyzed using Scanning Electron and Transmission Electron Microscopies (SEM and TEM). The TiO2 layers in

Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control

Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory.

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

This work has focused on defining just the storage node portion of the devices, which utilize the resis-tance change within the film to store information via two dif-ferent stable resistance states, and has attempted to de-termine the properties of such structures.

Direct observation of conducting filaments on resistive switching of NiO thin films

The Hg∕NiO∕Pt capacitor with a Hg top electrode diameter of about 35μm showed the typical bistable resistive switching characteristic. After the removal of the Hg top electrode, we directly observed