Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

@article{Lee2016RealtimeDI,
  title={Real-time device-scale imaging of conducting filament dynamics in resistive switching materials},
  author={Keundong Lee and Youngbin Tchoe and Hosang Yoon and Hyeonjun Baek and Kunook Chung and Sangik Lee and Chansoo Yoon and Bae Ho Park and Gyu‐Chul Yi},
  journal={Scientific Reports},
  year={2016},
  volume={6}
}
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range… 
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TLDR
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Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano‐sized (10 nm to 30 nm in diameter) conducting

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For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the application of electric fields is

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The microstructure of TiO2 functional layers in nanoscale resistive switching devices was analyzed using Scanning Electron and Transmission Electron Microscopies (SEM and TEM). The TiO2 layers in

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Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory.

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TLDR
This work has focused on defining just the storage node portion of the devices, which utilize the resis-tance change within the film to store information via two dif-ferent stable resistance states, and has attempted to de-termine the properties of such structures.

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