Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era

@article{Myung2020RealTimeTA,
  title={Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era},
  author={Sanghoon Myung and J. Kim and Yongwoo Jeon and Wonik Jang and In Huh and Jaemin Kim and Songyi Han and K. Baek and Jisu Ryu and Yoon-suk Kim and Jiseong Doh and Jaeho Kim and C. Jeong and D. Kim},
  journal={2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)},
  year={2020},
  pages={347-350}
}
  • Sanghoon Myung, J. Kim, +11 authors D. Kim
  • Published 2020
  • Computer Science
  • 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively. Our framework enables to update automatically deep learning models by estimating the uncertainty of the model prediction. Our Real-Time TCAD framework is validated on 130nm processes for… Expand

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