Read stability and Write ability analysis of different SRAM cell structures

@inproceedings{Gadhe2013ReadSA,
  title={Read stability and Write ability analysis of different SRAM cell structures},
  author={Ajay Gadhe and Ujwal Shirode},
  year={2013}
}
SRAM cell read stability and write-ability is major concerns in nanometer CMOS technologies, due to the progressive increase in intra-die variability and VDD scaling. This paper analyzes the read stability and write ability of 6T, 8T, 9T SRAM cell structures. SRAM cell stability analysis is typically based on Static Noise Margin (SNM) investigation. This paper represents the simulation of three SRAM cell topologies and their comparative analysis on the basis of read noise margin (RNM), write… CONTINUE READING
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Mondal2 and B.V.R. Reddy3, Static Noise Margin Analysis of SRAM Cell for High Speed Application

  • Debasis Mukherjee, Hemanta Kr
  • IJCSI International Journal of Computer Science…
  • 2010
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