Reactive ion etching for VLSI

  • L. Ephrath
  • Published 1980 in IEEE Transactions on Electron Devices

Abstract

Reactive Ion Etching (RIE) is a dry etching technique that is used to etch 1-µm and submicrometer patterns into films of silicon and silicon compounds. RIE is suitable for VLSI applications because etching is anisotropic and proceeds via chemical reactions with the substrate. Anisotropic etching allows faithful reproduction of resist patterns into the… (More)

Topics

5 Figures and Tables

Cite this paper

@article{Ephrath1980ReactiveIE, title={Reactive ion etching for VLSI}, author={L. Ephrath}, journal={1980 International Electron Devices Meeting}, year={1980}, pages={402-404} }