Rare-metal-free high-performance Ga-Sn-O thin film transistor

@article{Matsuda2017RaremetalfreeHG,
  title={Rare-metal-free high-performance Ga-Sn-O thin film transistor},
  author={Tokiyoshi Matsuda and Kenta Umeda and Yuta Kato and Daiki Nishimoto and Mamoru Furuta and Mutsumi Kimura},
  journal={Scientific Reports},
  year={2017},
  volume={7}
}
Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A… 
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  • Chuan Liu, Zhaogui Wang
  • Materials Science
    2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
  • 2018
We report a newly developed solution-processed amorphous oxide semiconductor, gallium-tin-oxide (GTO), for the active layer of thin-film transistors (TFTs). The transparent GTO thin film was
Solution-processed ITO thin-film transistors with doping of gallium oxide show high on-off ratios and work at 1 mV drain voltage
Indium tin oxide (ITO) is generally used as an electrode material but has recently been demonstrated to be a competitive candidate for use in semiconductor layers in high-performance thin-film
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Amorphous oxide semiconductors have gained significant attention in the past few decades and have emerged as a promising material for thin-film transistors (TFTs) because they offer high carrier
Solution processed amorphous gallium-incorporated tin oxide thin-film transistors
In this paper, we prepared amorphous gallium-incorporated tin oxide (a-SnGaO) thin-film transistors (TFTs) with respect to various Ga contents and annealing temperatures. All TFTs exhibit excellent
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