Rare-metal-free high-performance Ga-Sn-O thin film transistor

  title={Rare-metal-free high-performance Ga-Sn-O thin film transistor},
  author={Tokiyoshi Matsuda and Kenta Umeda and Yuta Kato and Daiki Nishimoto and Mamoru Furuta and Mutsumi Kimura},
  journal={Scientific Reports},
Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A… 
Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices
Oxide-based electronics call for low-cost and stable semiconductors to reduce cost and enable long-term operations. Transistors based on Sn show high field-effect mobility but generally exhibit weak
Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors
Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface
Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.
The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures,
Solution-processed gallium-tin-oxide as a new choice for indium-free active layers in TFTs
  • Chuan Liu, Zhaogui Wang
  • Materials Science
    2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
  • 2018
We report a newly developed solution-processed amorphous oxide semiconductor, gallium-tin-oxide (GTO), for the active layer of thin-film transistors (TFTs). The transparent GTO thin film was
Solution-processed ITO thin-film transistors with doping of gallium oxide show high on-off ratios and work at 1 mV drain voltage
Indium tin oxide (ITO) is generally used as an electrode material but has recently been demonstrated to be a competitive candidate for use in semiconductor layers in high-performance thin-film
A Review on the Recent Advancements in Tin Oxide-Based Thin-Film Transistors for Large-Area Electronics
Amorphous oxide semiconductors have gained significant attention in the past few decades and have emerged as a promising material for thin-film transistors (TFTs) because they offer high carrier
Solution processed amorphous gallium-incorporated tin oxide thin-film transistors
In this paper, we prepared amorphous gallium-incorporated tin oxide (a-SnGaO) thin-film transistors (TFTs) with respect to various Ga contents and annealing temperatures. All TFTs exhibit excellent


Present status of amorphous In–Ga–Zn–O thin-film transistors
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was
Material characteristics and applications of transparent amorphous oxide semiconductors
Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a Hall voltage sign anomaly, that are not seen
Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 $\mathrm{cm}^{2}$ /Vs
High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a dc reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was
High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In–Ga–O (IGO) thin film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick IGO TFT showed
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
ZnO-based transparent thin-film transistors
Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ∼75% in the visible portion of the electromagnetic spectrum.
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y2O3 passivation layer.
Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique
Amorphous In–Ga–Zn–O (α-IGZO) is expected for thin-film transistors (TFTs) in next-generation flat-panel displays but its intrinsic properties are not understood well and different mobility models