Rank Modulation for Flash Memories

  title={Rank Modulation for Flash Memories},
  author={Anxiao Jiang and Robert Mateescu and Moshe Schwartz and Jehoshua Bruck},
  journal={IEEE Transactions on Information Theory},
We explore a novel data representation scheme for multilevel flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a ldquopush-to-the-toprdquo operation, which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present… CONTINUE READING
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