Random telegraph noise of deep-submicrometer MOSFETs

  title={Random telegraph noise of deep-submicrometer MOSFETs},
  author={K. K. Hung and P. K. Ko and Chenming Calvin Hu and Y. C. Cheng},
  journal={IEEE Electron Device Letters},
The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area (<or=1 mu m/sup 2/) at room temperature is studied. Analysis of the amplitude of the current fluctuations reveals that the trapped charges generate noise through modulation of the carrier mobility in addition to the carrier number. Parameters needed for modeling the carrier mobility fluctuation effect on the flicker noise in conventional MOSFETs are extracted directly from the random telegraph noise… CONTINUE READING
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