Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

@article{Kim2010RandomTS,
  title={Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor},
  author={Heesang Kim and Byoungchan Oh and Kyungdoo Kim and Seon-Yong Cha and Jae-Goan Jeong and Sung-Joo Hong and Jongho Lee and Byung-Gook Park and Hyungcheol Shin},
  journal={Japanese Journal of Applied Physics},
  year={2010},
  volume={49},
  pages={094102}
}
We generated traps inside gate oxide in gate–drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler–Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL… Expand
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References

SHOWING 1-10 OF 16 REFERENCES
Low-frequency noise in deep-submicron metal-oxide-semiconductor field-effect transistors
The author reviews the recent results obtained on the low-frequency noise characteristics of deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFETs). The manuscript coversExpand
A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time
A new leakage phenomenon called variable hold time (VHT) is reported which can compromise the data retention performance of modern DRAMs. Careful observations of retention (hold) time on many devicesExpand
Si-H bond breaking induced retention degradation during packaging process of 256 mbit DRAMs with negative wordline bias
Data retention degradation of a 256-Mbit DRAM during the packaging process is investigated in this paper. Electrical measurement and device simulation show that a trap-assisted leakage degrades theExpand
Highly scalable saddle MOSFET for high-density and high-performance DRAM
We proposed an MOS device structure with a recess channel and side gate, and characterized key features of the device through three-dimensional device simulation for the first time. DeviceExpand
1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
We demonstrate that deviations from 1/ f noise behavior found in submicron silicon metal‐oxide‐semiconductor field‐effect transistors operating at room temperature are the direct result of theExpand
Individual interface states and their implications for low-frequency noise in MOSFETs
Abstract We show that the wide distribution of time constants required to explain 1/ƒ noise in MOSFETs arises as a natural consequence of the multi-phonon model of carrier trapping into individualExpand
Random telegraph noise of deep-submicrometer MOSFETs
The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area (<or=1 mu m/sup 2/) at room temperature is studied. Analysis of the amplitude of the currentExpand
Internal probing of submicron FETs and photoemission using individual oxide traps
In submicron field-effect transistors with channel area less than 0.5 µm 2 , the capture or emission of a single electron (or hole) in the gate oxide has an easily observable effect on the deviceExpand
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise
Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discreteExpand
Bistable Current Fluctuations in Reverse‐Biased p‐n Junctions of Germanium
In base‐to‐emitter diodes of p‐n‐p germanium transistors biased in reverse direction far below breakdown, bistable current fluctuations have been observed. These fluctuations show the typicalExpand
...
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