Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

  title={Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor},
  author={Heesang Kim and Byoungchan Oh and Kyungdoo Kim and Seon-Yong Cha and Jae-Goan Jeong and Sung-Joo Hong and Jongho Lee and Byung-Gook Park and Hyungcheol Shin},
  journal={Japanese Journal of Applied Physics},
We generated traps inside gate oxide in gate–drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler–Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL… Expand
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