Random Dopant Fluctuation in Limited-Width FinFET Technologies

@article{Chiang2007RandomDF,
  title={Random Dopant Fluctuation in Limited-Width FinFET Technologies},
  author={Meng-Hsueh Chiang and Jeng-Nan Lin and Keunwoo Kim and C. Chuang},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={2055-2060}
}
In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally ldquoundopedrdquo silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The… CONTINUE READING
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