Raman study of ion-induced defects in N-layer graphene

@article{Jorio2010RamanSO,
  title={Raman study of ion-induced defects in N-layer graphene},
  author={Ado Jorio and M{\'a}rcia Maria Lucchese and Fernando Stavale and Erlon Henrique Martins Ferreira and Marcus V. O. Moutinho and Rodrigo B. Capaz and Carlos Alberto Achete},
  journal={Journal of Physics: Condensed Matter},
  year={2010},
  volume={22},
  pages={334204}
}
Raman scattering is used to study the effect of low energy (90 eV) Ar + ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm − 1) and the disorder-induced D band (1345 cm − 1) with ion fluence is determined for mono-, bi-, tri- and ∼ 50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar + ions in AB Bernal stacked graphite, and how they affect the… 

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