Radio Frequency Transistors and Circuits Based on CVD MoS2.

@article{Sanne2015RadioFT,
  title={Radio Frequency Transistors and Circuits Based on CVD MoS2.},
  author={Atresh Sanne and Rudresh Ghosh and Amritesh Rai and Maruthi N. Yogeesh and S. H. Shin and Ankit Sharma and Karalee Ann Jarvis and Leo Mathew and R. Padmanabha Rao and Deji Akinwande and Sanjay Kumar Banerjee},
  journal={Nano letters},
  year={2015},
  volume={15 8},
  pages={
          5039-45
        }
}
We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied… CONTINUE READING
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  • 2018 IEEE/MTT-S International Microwave Symposium - IMS
  • 2018
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