Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

@article{Zota2014RadioFrequencyCO,
  title={Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs},
  author={Cezar B. Zota and Guntrade Roll and Lars-Erik Wernersson and Erik Lind},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={4078-4083}
}
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. Lg = 32 nm devices exhibit peak transconductance of 1.8 mS/μm at Vds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-π model is developed, which includes both the effect of impact ionization and border traps and shows good… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 17 references

High-frequency performance of self-aligned gate-last surface channel In0.53Ga0.47As MOSFET

  • M. Egard
  • IEEE Electron Device Lett., vol. 33, no. 3, pp…
  • 2012
2 Excerpts

A distributed model for border traps in Al2O3–InGaAs MOS devices

  • Y. Yuan
  • IEEE Electron Device Lett., vol. 32, no. 4, pp…
  • 2011
3 Excerpts

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