Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

  title={Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs},
  author={Cezar B. Zota and Guntrade Roll and Lars-Erik Wernersson and Erik Lind},
  journal={IEEE Transactions on Electron Devices},
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. Lg = 32 nm devices exhibit peak transconductance of 1.8 mS/μm at Vds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-π model is developed, which includes both the effect of impact ionization and border traps and shows good… CONTINUE READING
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