Radical-source molecular beam epitaxy of ZnO-based heterostructures

@inproceedings{DISSERTATIO2010RadicalsourceMB,
  title={Radical-source molecular beam epitaxy of ZnO-based heterostructures},
  author={N DISSERTATIO and Herr Physikingenieur and Sergey Sadofiev and Christoph Markschies and Sch{\"o}n Lutz-Helmut and Gutachter and Fritz Henneberger and W Ted Masselink and A. Waag and Ii Zusammenfassung},
  year={2010}
}
  • D I S S E R T A T I O N, Herr Physikingenieur, +7 authors Ii Zusammenfassung
  • Published 2010
This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layerby-layer growth mode… CONTINUE READING
1 Citations
129 References
Similar Papers

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 129 references

ZnO epilayers on (111) Si using epitaxial Lu 2 O 3 bufer layers

  • Gac + 08 ] Guo, W Allenic, +4 authors C Schlom
  • In: APPLIED PHYSICS LETTERS
  • 2008

Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on rsapphire by plasma-assisted molecular beam epitaxy

  • Cbl + 07 ] Chauveau, J.-M Buell, +7 authors B Morhain
  • In: JOURNAL OF CRYSTAL GROWTH
  • 2007

High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxy

  • Tmy + 07 ] Tampo, H Matsubara, +5 authors H Niki
  • In: JOURNAL OF CRY- STAL GROWTH
  • 2007

Mechanism for radiative recombination in ZnCdO alloys

  • Bbp + 07 ] Buyanova, I A Bergman, +6 authors A Dong
  • In: APPLIED PHYSICS LETTERS
  • 2007

Optical investigations and exciton localization in high quality Zn 1−x Mg x O- ZnO single quantum wells

  • Asesb + 07 ] Al-Suleiman, M El-Shaer, A Bakin, A Wehmann, H.-H Waag
  • In: APPLIED PHYSICS LETTERS
  • 2007

Optically pumped In- GaN/GaN MQW lift-off lasers grown on silicon substrates. In: SUPER- LATTICES AND MICROSTRUCTURES

  • Ldt + 07 ] Lutsenko, E V Danilchyk, +9 authors M Heuken
  • Optically pumped In- GaN/GaN MQW lift-off lasers…
  • 2007

Preparation of ZnO substrates for epitaxy: Structural, surface, and electrical properties

  • Gnv + 07 ] Graubner, S Neumann, C Volbers, N Meyer, B K Bläsing, J Krost
  • In: APPLIED PHYSICS LETTERS
  • 2007

Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures. In: APPLIED PHYSICS LETTERS

  • Stl + 07 ] Shubina, T V Toropov, +12 authors G Monemar
  • Recombination dynamics and lasing in ZnO/ZnMgO…
  • 2007

Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate

  • Kfk + 07 ] Kojima, K Funato, M Kawakami, Y Masui, S Nagahama, S Mukai
  • In: APPLIED PHYSICS LETTERS
  • 2007

Similar Papers

Loading similar papers…