Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications

@article{Najafizadeh2007RadiationRO,
  title={Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications},
  author={Laleh Najafizadeh and A. K. Sutton and Bongim Jun and J. Cressler and Tuan Anh Vo and Omeed Momeni and Mohammad M. Mojarradi and Chandradevi Ulaganathan and Si Chen and B. J. Blalock and Yiyun Yao and Xin Yu and F. F. Dai and P. Marshall and C. Marshall},
  journal={2007 9th European Conference on Radiation and Its Effects on Components and Systems},
  year={2007},
  pages={1-5}
}
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were… CONTINUE READING

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