Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

  title={Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology},
  author={Bingxu Ning and Zhengxuan Zhang and Zhangli Liu and Zhiyuan Hu and Ming Chen and Dawei Bi and Shichang Zou},
  journal={Microelectronics Reliability},
The effects of total ionizing dose (TID) irradiation on the inter-device and intra-device leakage current in a 180-nm flash memory technology are investigated. The positive oxide trapped charge in the shallow trench isolation (STI) oxide is responsible for the punch-through leakage increase and punch-through voltage decrease. Nonuniform radiation-induced oxide trapped charge distribution along the STI sidewall is introduced to analyze the radiation responses of input/output (I/O) device and… CONTINUE READING
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