Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

@article{Ning2012RadiationinducedST,
  title={Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology},
  author={Bingxu Ning and Zhengxuan Zhang and Zhangli Liu and Zhiyuan Hu and Ming Chen and Dawei Bi and Shichang Zou},
  journal={Microelectronics Reliability},
  year={2012},
  volume={52},
  pages={130-136}
}
The effects of total ionizing dose (TID) irradiation on the inter-device and intra-device leakage current in a 180-nm flash memory technology are investigated. The positive oxide trapped charge in the shallow trench isolation (STI) oxide is responsible for the punch-through leakage increase and punch-through voltage decrease. Nonuniform radiation-induced oxide trapped charge distribution along the STI sidewall is introduced to analyze the radiation responses of input/output (I/O) device and… CONTINUE READING
3 Citations
23 References
Similar Papers

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 23 references

Effect of radiation exposure on the endurance of commercial NAND flash memory

  • TR Oldham, M Friendlich
  • IEEE Trans Nucl Sci 2009;56:3280–4
  • 2009
1 Excerpt

Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments

  • L Gonella, F Faccio
  • Nucl Instrum Methods Phys Res A 2007;582:750–4
  • 2007
1 Excerpt

Similar Papers

Loading similar papers…